Excerpt from 2014 IEEE Salary Report, Feb. 2018.
IEEE International Electron Devices Meeting, "Simulation of Enhanced Hole Ballistic Velocity in Asymmetrically Strained Germanium Nanowire Trigate p-MOSFETs," Dec. 2013.
Berkeley Symposium on Energy Efficient Electronic Systems, "Electrostatic Design of Vertical Tunneling Field-Effect Transistors," Oct. 2013.
E3S Center Annual Retreat, "Experimental Study of Tunneling in the Electron-Hole Bilayer Structure," Aug. 2013.
MTL Annual Research Conference, "Tunneling Transistors for Low Power Electronics," Jan. 2013.
E3S Center Annual Retreat, "Analysis of Band-to-band Tunneling Structures," Aug. 2012
NSF E3S Review, "Extraction of Energy Band Alignments in strained-Si/strained-Ge Type-II Heterostructures," Jan. 2012.
E3S Center Annual Retreat, "InAs/GaSb QW Tunneling Project: Status, Results, & Direction," Aug. 2011.
E3S Center-wide Presentation, "Extraction of Large Valence Band Offsets in Strained-Si/Strained-Ge Type II Heterostructures on Relaxed SiGe Substrates," Feb. 2012.
Research Qualifying Exam, "Valence Band Energy Offset and Effect Band Gap Extraction of strained-Si/strained-Ge Type-II Heterostructures on Relaxed SiGe," May 2011.
E3S Center-wide Presentation, "Imaginary Band Structure and Its Role in Calculating Transmission Probability in Semiconductors," Dec. 2010.