J. Teherani, W. Chern, D. Antoniadis, and J. Hoyt, “Ultra-Thin, High Quality HfO2 on Strained-Ge MOS Capacitors with Low Leakage Current,” ECS Transactions (also presented at the ECS SiGe, Ge, and Related Compounds Symposium), vol. 64, no. 6, pp. 267-271, Oct. 2014.
T. Yu, J. Teherani, D. A. Antoniadis, and J. L. Hoyt, “Effects of substrate leakage and drain-side thermal barriers in In0.53Ga0.47As/GaAs0.5Sb0.5 quantum-well tunneling field-effect transistors,” Appl. Phys. Express, vol. 7, no. 9, p. 094201, Sep. 2014.
S. Agarwal, J. Teherani, J. Hoyt, D. Antoniadis, and E. Yablonovitch. "Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor," IEEE Transactions on Electron Devices, vol. 61, no. 5, pp. 1599-1606, April 2014.
W. Chern, P. Hashemi, J. Teherani, D. Antoniadis, and J. Hoyt, "Record Hole Mobility at High Vertical Fields in Planar Strained Germanium on Insulator with Asymmetric Strain," IEEE Electron Device Letters, vol. 35, no. 3, pp. 309-311, March 2014.
J. Teherani, “Uniaxial and Biaxial Stress/Strain Calculator for Semiconductors,” on nanoHUB.org, 2014.
T. Yu, J. Teherani, D. A. Antoniadis, and J. Hoyt, “InGaAs/GaAsSb Quantum-Well Tunnel-FETs With Tunable Backward Diode Characteristics,” IEEE Electron Device Letters, vol. 34, no. 12, pp. 1503–1505, Dec. 2013.
J. Teherani, T. Yu, D. Antoniadis, and J. Hoyt, “Electrostatic design of vertical tunneling field-effect transistors,” Third Berkeley Symposium on Energy Efficient Electronic Systems, Oct. 2013.
J. Teherani, W. Chern, D. Antoniadis, and J. Hoyt, “Simulation of Enhanced Hole Ballistic Velocity in Asymmetrically Strained Germanium Nanowire Trigate p-MOSFETs,” IEEE International Electron Devices Meeting (IEDM), 2013, pp. 32.4.1–32.4.4.
J. Teherani and J. Hoyt, “A Physically-Intuitive Method for Calculation of the Local Lattice Constant from a High-Resolution Transmission Electron Microscopy Image by Fourier Analysis,” arXiv e-print 1309.3155, Sep. 2013.
J. Teherani, “TEM Lattice Calculator,” on nanoHUB.org, 2013.
S. Agarwal, J. Teherani, J. Hoyt, D. Antoniadis, and E. Yablonovitch, “Optimization of the electron hole bilayer tunneling field effect transistor,” Device Research Conference (DRC), 2013, pp. 109–110.
J. Teherani, S. Agarwal, E. Yablonovitch, J. Hoyt, and D. Antoniadis, “Impact of Quantization Energy and Gate Leakage in Bilayer Tunneling Transistors,” IEEE Electron Device Letters, vol. 34, no. 2, pp. 298–300, Feb. 2013.
W. Chern, P. Hashemi, J. Teherani, T. Yu, Y. Dong, G. Xia, D. Antoniadis, and J. Hoyt, “High mobility high-K-all-around asymmetrically-strained Germanium nanowire trigate p-MOSFETs,” IEEE International Electron Devices Meeting (IEDM), 2012, pp. 16.5.1–16.5.4.
J. Teherani, W. Chern, D. Antoniadis, J. Hoyt, L. Ruiz, C. Poweleit, and J. Menéndez, “Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates,” Phys. Rev. B, vol. 85, no. 20, p. 205308, May 2012.
P. Hashemi, W. Chern, H. Lee, J. Teherani, Y. Zhu, J. Gonsalvez, G. Shahidi, and J. Hoyt, “Ultrathin Strained-Ge Channel P-MOSFETs With High- /Metal Gate and Sub-1-nm Equivalent Oxide Thickness,” IEEE Electron Device Letters, vol. 33, no. 7, pp. 943–945, Jul. 2012.
P. Solomon, I. Lauer, A. Majumdar, J. Teherani, M. Luisier, J. Cai, and S. Koester, “Effect of uniaxial strain on the drain current of a heterojunction tunneling field effect transistor,” IEEE Electron Device Letters, 2011.
J. Teherani, “Band-to-band tunneling in silicon diodes and tunnel transistors,” S.M. thesis, Massachusetts Institute of Technology, Cambridge, MA, 2010.
P. Hashemi, J. Teherani, and J. Hoyt, “Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-k/metal-gate: effects of hydrogen thermal annealing and nanowire shape,” IEEE International Electron Device Meeting (IEDM), 2010.
J. Beck, R. Scritchfield, B. Sullivan, J. Teherani, C. Wan, M. Kinch, M. Ohlson, M. Skokan, L. Wood, P. Mitra, M. Goodwin, and J. Robinson, “Performance and modeling of the MWIR HgCdTe electron avalanche photodiode,” co-published in Journal of Electronic Materials and Proceedings of the SPIE, 2009.
H. Schaake, M. Kinch, D. Chandra, F. Aqariden, P. Liao, D. Weirauch, C.-F. Wan, R. Scritchfield, W. Sullivan, J. Teherani, and H. Shih, “High-Operating-Temperature MWIR Detector Diodes,” Journal of Electronic Materials, vol. 37, no. 9, pp. 1401–1405, Sep. 2008.