Building at the Nanoscale: Part 01, a K-12 outreach video on the differences between 2D and 3D materials
Building at the Nanoscale: Part 02, a K-12 outreach video showing how we build structures from atomically thin 2D materials
What is a Semiconductor, a K-12 outreach video on what makes semiconductors different from insulators and conductors
How Computers Compute, a K-12 outreach video on switches and transistors
James T. Teherani joined Columbia University in 2015 as an Assistant Professor in Electrical Engineering. He has taught
His research interests span semiconductor materials and semiconductor devices with the goal of explaining device physics through modeling, simulation, and experiment. His group conducts both theoretical and experimental work —from quantum-mechanical simulations to nanofabrication. His current research topics involve measuring and modeling device physics of 2D semiconductors, especially transition metal dichalcogenides such as MoS2 and WSe2.
Previous research has included strain engineering, high-mobility transistors, tunneling transistors (TFETs) fabricated in strained Si, strained Ge, strained SiGe, InAs, and GaSb material systems.
Teherani received the NSF CAREER Award in 2018 for his work on "Exploiting Many-Particle Physics for Low-Energy Nanoelectronics." He also received the 2018 Edward and Carole Kim Faculty Involvement Award for excellent teaching and commitment to students. Teherani has also received the 2014 George E. Smith Award for best paper in IEEE Electron Device Letters, the NSF Graduate Research Fellowship (NSF GRFP), and the National Defense Science and Engineering Graduate Fellowship (NDSEG).
He received his PhD and SM in Electrical Engineering and Computer Science from MIT in 2015 and 2010, respectively. His PhD thesis (conducted under Prof. Judy L. Hoyt and Prof. Dimitri A. Antoniadis) studied the fundamental limits of switching abruptness of tunneling transistors (TFETs). He received his BS in Electrical and Computer Engineering from the University of Texas at Austin in 2008.
Prof. Teherani welcomes inquiries from those interested in undergraduate and graduate research opportunities in his group. If interested, please contact him.